| PART |
Description |
Maker |
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
| HB56SW3272ESK HB56SW3272ESK-5 HB56SW3272ESK-6 |
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)
|
HITACHI[Hitachi Semiconductor]
|
| HB56UW873E-5F HB56UW873E-6F HB56UW873E-F |
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components)
64MB Buffered EDO DRAM DIMM 8-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M 隆驴 8 components)
|
Elpida Memory
|
| HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HYMP125F72CP8D3-C4 HYMP125F72CP8D3-S5 HYMP125F72CP |
240pin Fully Buffered DDR2 SDRAM DIMMs
128M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MSC23V13258D-60BS2 |
1M X 32 EDO DRAM MODULE, 60 ns, DMA100 DIMM-100
|
Oki Electric Industry Co., Ltd.
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| HM5165405F HM5164405F |
64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
|
Hitachi,Ltd.
|
